论文总字数：23484字

摘 要

透明导电氧化物（TCO）是一种结合导电性和光学透明性的独特材料，包括ITO（掺Sn的In₂O₃），FTO(掺F的SnO₂)和AZO（掺Al的ZnO）所以它有广泛的应用，包括太阳能电池，平板显示器，触摸屏，发光二极管和透明电子元件。其中大部分的市售TCO都是n型的，在微电子和光电子器件以及电路的应用中，它只能作为无源器件，因而限制了透明导电氧化物薄膜的应用。如果能制备出p型的透明导电氧化物薄膜，它将从无源器件拓展到有源器件，则可以拓宽它的应用领域。在之前的研究中，已经采用昂贵的真空法在高温下制备一些p型导电氧化物CuAlO₂和CuInO₂薄膜，然而，这些方法无法在普通玻璃在这种方法中不能作为衬底。因此，探索在玻璃上低成本制备CuAlO₂和CuInO₂薄膜的新方法至关重要。

本论文主要探索低温水热法制备p型导电氧化物薄膜-CuAlO₂和CuInO₂。主要的内容和结论如下：

（1）当改变前驱体溶液的pH值为6时，衬底背面能够生长一层透明均匀的薄膜。XRD表征结果表明这层样品是CuInO₂非晶薄膜。

（2）当改变前驱体溶液中的Al/Cu和In/Cu离子比例为0.8时，衬底上生长一层透明无色薄膜。

关键词：CuAlO₂ CuInO₂ p型透明导电氧化物薄膜

THESIS：Preparation of p-type Conductive Oxide CuAlO₂ and CuInO₂ Thin Films by Hydrothermal Method

Abstract

Transparent conductive oxide (TCO) films are unique materials that combines conductivity and optical transparency, including ITO (Sn doped In₂O₃), FTO (F doped SnO₂) and AZO (Al doped ZnO). They have been widely used in solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronic components. Most of commercially available TCOs are n-type, which are only used as passive devices in microelectronics, optoelectronic devices and circuit applications. If some p-type transparent conductive oxide films are prepared, application of TCOs will be extended from passive devices to active devices. In previous studies, some p-type conductive oxide films (CuAlO₂ and CuInO₂) have been prepared by expensive vacuum method at high temperatures. Glass cannot be used as substrates in these methods. Therefore, it is important to prepare CuAlO₂ and CuInO₂ on glass substrates by low-cost method.

In this study, we focus on preparing p-type conductive oxide films (CuAlO₂ and CuInO₂) by hydrothermal method at lower temperatures. The major results are summarized as follows:

(1) When pH of precursor solution is 6, uniform transparent films are grown on the back of the substrates. However, the films are amorphous by XRD characterization.

(2) When the ratios of Al/Cu and In/Cu in the precursor solution are 0.8, some colorless and transparent films are grown on the substrates.

Key Words：CuAlO₂；CuInO₂；p-type TCO

目 录

摘要……………………………………………………………………....................I

ABSTRACT……………………………………………………………………....II

第一章 文献综述……………………………………………………………….....1

1.1透明导电氧化物的介绍............................................................................................................1

1.2 p型TCO的设计规则...............................................................................................................2

1.3 CuMO₂的晶体结构...................................................................................................................2

1.4 CuMO₂的研究进展...................................................................................................................3

1.5 论文的研究内容及创新部分..................................................................................................4

本章参考文献：...............................................................................................................................4

第二章CuAlO₂和CuInO₂薄膜的制备方法和表征..............................................7

请支付后下载全文，论文总字数：23484字