1. 毕业设计（论文）的内容和要求

1：毕业论文内容: 单晶硅太阳能电池凭借着高的能量转换效率，占据着大部分市场，一直是人们关注的重点。

人们有从片源入手着重提升固有品质、也有优化硅片表面陷光结构降低反射率或是采取新型背面电极钝化方法等等。

而去除硅片表面损伤层是重要的一步，因此我们通过抛光去除损伤层，而找出一种添加剂能加快抛光速率，提高反射率更为重要。

2. 参考文献

[1]. 杨永平等, 一种晶硅太阳能电池的背抛光装置, 2014. [2]. 李玉庆, 蒋方丹与单伟, 一种新型晶体硅太阳电池及其制作方法, 2011. [3]. 姜元建, 张晓丹与赵颖, 化学抛光对硅异质结太阳电池性能的影响. 激光与光电子学进展.2018 [4]. Ke Z, et al. Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted. Ultrasonics, 2017. 80: p. 9-14. [5]. Zhou Y, et al. Chemical Mechanical Polishing (CMP) of SiC Wafer Using Photo-Catalyst Incorporated Pad. Ecs journal of solid state science and technology, 2017. 6(9): p. P603-P608. [6]. 韩健鹏等, 一种太阳能晶硅电池的开窗工艺, 2013. [7]. Chen Y, et al. Core/shell composites with polystyrene cores and meso-silica shells as abrasives for improved chemical mechanical polishing behavior. Journal of nanoparticle research, 2015. 17(3639). [8].Zhou Y, et al.Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers. Tribology international, 2015. 87: p. 145-150. [9]. Hu Y, et al. Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping. Materials, 2018. 11(202210). [10].郑佳仁, 刘幼海与刘吉人.一种化学抛光法制作异质结单晶硅薄膜太阳能电池, 2013. [11].Chen X, Y Zhao and Y Wang.Study on Surface Damage of Single Crystalline Silicon Wafer during Chemical Mechanical Polishing. Lubrication Engineering, 2014. 39(0254-0150(2014)39:42.0.TX;2-54): p. 15-22,60. [12].Cai Y, et al. Chemical Mechanical Polishing of Selective Epitaxial Grown Germanium on Silicon. Ecs journal of solid state science and technology, 2014. 3(2): p. P5-P9. [13].Song H, et al.,Effect of Cations on the Chemical Mechanical Polishing of SiO2 Film. Chinese physics letters, 2013. 30(0981039). [14].Uneda M, et al. Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs. Sensors and materials, 2014. 26(6): p. 435-445. [15].Pineiro A, et al. The use of potassium peroxidisulphate and Oxone (R) as oxidizers for the chemical mechanical polishing of silicon wafers. Wear, 2013. 303(1-2): p. 446-450. [16].Zhang Z, et al. Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry. Ecs journal of solid state science and technology, 2017. 6(10): p. P723-P727. [17]Yuan Z, et al.UV-TiO2 photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer. Materials and manufacturing processes, 2018. 33(11): p. 1214-1222.

3. 毕业设计（论文）进程安排

12.26-1.10 文献查询 对课题较好的理解 1.11-1.18 文献翻译及开题 仪器及材料准备 3.1-4.3 实验工作 实验和测试 4.25 论文中期检查 4.26－5.31 实验工作 实验和测试 6.1-6.7 撰写论文