1. 毕业设计（论文）的内容和要求

硅异质结太阳能电池结合了晶硅和非晶硅薄膜电池的两者优点，保证了较高的电池转换效率，同时采取低温生产工艺，降低了成本，还避免了电池的光致衰退效应，具有较好的稳定性。

目前硅异质结电池最高转换效率超过单晶硅电池，达到26.6%。

但是，现在全世界除了日本panasonic和kaneka以外,还没有其他公司或科研机构能够成功制备出如此高效率的硅异质结电池。

2. 参考文献

[1] Yoshikawa K, Kawasaki H, Yoshida W, et al. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%[J]. Nature Energy. 2017, 2: 17032. [2] Tomasi A, Sahli F, Seif J P, et al. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation[J]. IEEE Journal of Photovoltaics. 2016, 6(1): 17-27. [3] Chavali R V K, Johlin E C, Gray J L, et al. A Framework for Process-to-Module Modeling of a-Si/c-Si (HIT) Heterojunction Solar Cells to Investigate the Cell-to-Module Efficiency Gap[J]. IEEE Journal of Photovoltaics. 2016, 6(4): 875-887. [4] Taguchi M, Yano A, Tohoda S, et al. 24.7% record efficiency HIT solar cell on thin silicon wafer[J]. IEEE Journal of Photovoltaics. 2014, 4(1): 96-99. [5] Zhong S, Hua X, Shen W. Simulation of high-efficiency crystalline silicon solar cells with homo#8211;hetero junctions[J]. IEEE Transactions on Electron Devices. 2013, 60(7): 2104-2110. [6] Richter A, Hermle M, Glunz S W. Reassessment of the limiting efficiency for crystalline silicon solar cells[J]. IEEE Journal of Photovoltaics. 2013, 3(4): 1184-1191. [7] Mishima T, Taguchi M, Sakata H, et al. Development status of high-efficiency HIT solar cells[J]. Solar Energy Materials and Solar Cells. 2011, 95(1): 18-21. [8] Sch#252;ttauf J A, van der Werf K H, Kielen I M, et al. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition[J]. Applied physics letters. 2011, 98(15): 153514. [9] Schulze T F, Beushausen H N, Leendertz C, et al. Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions[J]. Applied Physics Letters. 2010, 96(25): 252102. [10] Datta A, Rahmouni M, Nath M, et al. Insights gained from computer modeling of heterojunction with instrinsic thin layer ”HIT” solar cells[J]. Solar Energy Materials and Solar Cells. 2010, 94(9): 1457-1462. [11] Tsunomura Y, Yoshimine Y, Taguchi M, et al. Twenty-two percent efficiency HIT solar cell[J]. Solar Energy Materials and Solar Cells. 2009, 93(6): 670-673. [12] Wu B R, Wuu D S, Wan M S, et al. Fabrication of selective-emitter silicon heterojunction solar cells using hot-wire chemical vapor deposition and laser doping[J]. Thin Solid Films. 2009, 517(17): 4749-4752. [13] Gielis J, Van Den Oever P J, Hoex B, et al. Real-time study of a#8722; Si: H∕ c#8722; Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation[J]. Physical Review B. 2008, 77(20): 205329. [14] De Wolf S, Descoeudres A, Holman Z C, et al. High-efficiency silicon heterojunction solar cells: A review[J]. green. 2012, 2(1): 7-24. [15] Sebastiani M, Di Gaspare L, Capellini G, et al. Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the c#8722; Si (100)/a#8722; S i: H Heterostructure[J]. Physical review letters. 1995, 75(18): 3352. [16] Lagowski J, Edelman P, Kontkiewicz A M, et al. Iron detection in the part per quadrillion range in silicon using surface photovoltage and photodissociation of iron‐boron pairs[J]. Applied physics letters. 1993, 63(22): 3043-3045. [17] Tanaka M, Taguchi M, Matsuyama T, et al. Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (artificially constructed junction-heterojunction with intrinsic thin-layer)[J]. Japanese Journal of Applied Physics. 1992, 31(11R): 3518.

3. 毕业设计（论文）进程安排

2017.12.11-2018.1.1，文献调研，完成开题报告 1.2-1.12，完成英文翻译 3.12-4.21，深刻理解n型硅异质结电池原理，学习和掌握AFORS-HET程序 4.22-5.5，进行模拟、初步分析结果和中期检查 5.6-5.26，进一步完善模拟结果,并分析全部数据 5.27-6.2，论文撰写 6.3-6.6，论文修改 6.7-6.10，准备PPT，答辩