论文总字数：23990字

摘 要

在传统的倒置结构LED器件中，常用的空穴传输材料 TFB 是可以与钙钛矿形成良好的电子接触。此外，为了使得电子传输层（ETL）和钙钛矿层之间同样获得良好的电子接触，无机n型金属氧化物，例如SnO₂, ZnO，和TiO₂都被广泛的使用在了LED器件中。尽管金属氧化物作为电子传输层具有许多突出的优点，但这也不能掩盖钙钛矿材料和电子之间仍然存在一些问题。比较经典的是金属氧化物和钙钛矿层之间的能级势垒不匹配，这一点会导致从ITO极注入的电子效率低下。另一个问题就是电子传输层与钙钛矿界面处的电荷复合问题，因为它可能会有非辐射复合出现，这点就限制了器件的效率，我们所希望的是辐射复合的出现。

因此，本篇论文通过引入界面层去修饰电子传输层，从而提高器件性能，本课题中使用的是乙二胺（EDA）界面材料，将这种材料加入到钙钛矿活性层和电子传输层之间，主要目的是为了制备高质量的钙钛矿薄膜，从而实现高效稳定的钙钛矿型电致发光器件。我们通过对钙钛矿薄膜进行测试分析得知，界面层的加入大大改善了薄膜的质量，薄膜覆盖率提高，并且通过EDA中氮原子的钝化作用，薄膜的光致发光强度提高，缺陷减少。在非常完美的薄膜基础上进行制备整体器件，最终EQE从6.9％提高到到9.42％，辐照度从22.64 w*sr^-1*m^-2提高到到44.21 w*sr^-1*m^-2。因此界面工程这种简单有效的策略将是实现高效稳定的钙钛矿发光二极管的关键一步。

关键词： 钙钛矿薄膜；发光二极管；界面层；高效率

ABSTRACT

In traditional inverted-structure LED devices, the commonly used hole transport material TFB can form good electronic contact with perovskite.In addition, inorganic n-type metal oxides such as SnO2, ZnO, and TiO2 are widely used in LED devices in order to obtain good electronic contact between electron transport layer (ETL) and perovskite layer.Although metal oxide has many outstanding advantages as an electron transport layer, it cannot conceal that there are still some problems between perovskite materials and electrons.The classic mismatch between the level barrier between the metal oxide and the perovskite layer leads to inefficient injection of electrons from the ITO pole.Another problem is the charge recombination between the electron transport layer and the perovskite interface, because it may have non-radiative recombination, which limits the efficiency of the device. What we hope is radiative recombination.

Therefore, this paper by introducing interface layer to modify the electronic transport layer, thus improve the device performance, this topic is used in the ethylene diamine (EDA) interface materials, the material added to the perovskite activity between layers and electron transport layer, the main purpose is to perovskite membrane preparation of high quality, so as to realize efficient and stable perovskite electroluminescent devices.We know from the test and analysis of perovskite films that the addition of interfacial layer greatly improves the quality and coverage of the films, and through the passivation of nitrogen atoms in EDA, the photoluminescence intensity of the films is improved and the defects are reduced.The final EQE was increased from 6.9% to 9.42%, and the irradiance was increased from 22.64 w*sr-1*m-2 to 44.21 w*sr-1*m-2.Therefore, interface engineering, a simple and effective strategy, will be a key step to achieve efficient and stable perovskite led.

Keywords : Perovskite thin film; Light-emitting diode; Interface layer; High efficiency

目 录

摘要.........................................................................................................................I

ABSTRACT................................................................................................................II

第一章 绪论................................................................................................................1

1.1 引言...................................................................................................................1

1.2 有机-无机钙钛矿材料..................................................................................1

1.2.1 钙钛矿材料的发展史..............................................................................1

1.2.2 钙钛矿材料性能介绍..............................................................................2

1.2.3 钙钛矿薄膜的制备..................................................................................4

1.3 钙钛矿材料的应用............................................................................................6

1.3.1 钙钛矿太阳能电池.......................................................................................6

1.3.2 发光二极管...................................................................................................6

1.3.3 光电探测器和激光.......................................................................................7

1.4 PeLEDs的器件结构和性能参数.......................................................................7

1.4.1 PeLEDs的器件结构....................................................................................7

1.4.2 性能参数.....................................................................................................8

1.5 本论文研究目的与主要内容............................................................................8

第二章 有无界面层的钙钛矿太阳能电池的制备及研究........................................10

2.1 PeLEDs的实验部分..........................................................................................11

2.1.1 仪器和试剂...................................................................................................11

2.1.2 实验内容.......................................................................................................12

2.2 测试结果与讨论................................................................................................13

2.2.1 薄膜测试及表征.........................................................................................13

2.2.2 器件测试及表征.........................................................................................15

第三章 总结与展望.....................................................................................................18

3.1 总结....................................................................................................................18

3.2 展望....................................................................................................................18

参考文献...........................................................,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,.....19

致谢..............................................................................................................................21

请支付后下载全文，论文总字数：23990字