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毕业论文网 > 任务书 > 材料类 > 复合材料与工程 > 正文

高SiC含量SiC-AlN复相陶瓷烧结性能与机械性能的研究任务书

 2020-05-11 23:23:49  

1. 毕业设计(论文)的内容和要求

行波管是一种重要的微波放大器,它被广泛地应用于各种国防重点工程,但由于其具有慢波结构的特点,所以十分容易产生有害振荡。

为此,我们必须在慢线区域内放置衰减材料来吸收非设计模式波,消除振荡,以确保获得既定的高频参数。

衰减材料是一种高频率的损耗材料,它能够将电磁能转换成热能和其他形式的能量从而将其消耗掉。

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2. 参考文献

[1] 黄向东, 李建保. 陶瓷材料吸收微波的微观机制[J]. 福州大学学报(自然科学版), 2004, 32(2): 169-172. [2] Luo, Z, et al. Joining of Sintered Silicon Carbide Ceramics Using Sodium Borosilicate Glass as the Solder[J]. International Journal of Applied Ceramic Technology, 2012, 9(4): p. 742-750. [3] Luo, Z,et al. Development of SiC#8211;SiC joint by reaction bonding method using SiC/C tapes as the interlayer[J].Journal of the European Ceramic Society, 2012, 32(14): p. 3819-3824. [4] Virkar A V, Jackson T B, Cutler R A. Thermodynamic and Kinetic Effects of oxygen removal on the thermal conductivity of Aluminum Nitride[J]. Journal of the American ceramic society, 1989, 72(11): 2031-2042 [5] Inger-Lise Tangen, Yingda Yu, et al. Preparation and characterisation of aluminium nitride-titanium nitride composites[J]. Journal of the European Ceramic Society, 2004, 24: 2169-2179. [6] Tangen I L, Yu Y D. Preparation and characterization of aluminium nitride-silicon carbide composites[J]. Ceramic International, 2004, 30: 931-938. [7] Jingxian Zhang, Rong Huang, et al. High toughness in laminated SiC ceramics from aqueous tape casting[J]. Scripta Materialia, 2005, 52: 381-385. [8] Sciti D,Balbo A, Bellosi A. Improvements offered by coprecipitation of sintering additives on ultra-fine SiC materials[J]. Advanced engineering materials,2005,7(3): 151-157. [9] 陈宇红, 韩非, 江涌等. AlN-Y2O3液相烧结碳化硅陶瓷[J]. 兵器材料科学与工程, 2009, 32(5): 1-3. [10] Kwang-Young Lim, Young-Wook Kim, et al. High temperature strength of silicon carbide sintered with 1 wt.% aluminum nitride and lutetium oxide[J]. Journal of the European Ceramic Society, 2013, 33: 345-350. [11] 武安华, 曹文斌, 李江涛等. SiC烧结的研究进展[J]. 粉末冶金工业, 2002, (3): 28-32. [12] 罗发, 周万城, 焦桓等. SiC(N)/LAS吸波材料吸波性能研究[J].无机材料学报, 2003, 18(3):580-584. [13] 朱新文, 江东亮, 谭寿洪. 碳化硅网眼多孔陶瓷的微波吸收特性[J]. 无机材料学报, 2002, 17(6):1152-1157. [14] 步文博, 丘泰, 徐结. AlN-SiC复相材料的制备及其微波衰减性能[J]. 硅酸盐学报, 2003, 31(9):828-832. [15] 方勇, 李晓云, 丘泰. Al2O3-SiC复相微波衰减材料的性能研究[J]. 电子元件与材料, 2005, 24(7):50-53. [16] P Kackell,F Bechstedt. Heterocrystalline SiC: ab initio calculatons for the interface structure of combinations of cubic and hexagonal SiC[J]. Applied Surface Science. 1996, (105): 490-494. [17] P Kackell, J Furthmuller, F Bechstedt. Polytypism and surface structure of SiC[J]. Applied Surface Science, 1997, 6:1346-1348. [18] Li, D, et al., Microstructure and reaction mechanism of SiC ceramic with mullite-zircon as a new liquid-phase sintering additives system[J]. Materials Science and Engineering: A, 2013, 559: p. 510-514. [19] Zhang, X.-Y, et al. Lossy AlN#8211;SiC composites fabricated by spark plasma sintering[J]. Journal of Materials Research. 2011, 19(09): p. 2759-2764. [20] Alfian Noviyanto, Dang-HyokYoon. Rare-earth oxide additives for the sintering of silicon carbide[J]. Diamond Related Materials. 2013, 38: p. 124-130. [21] Q.S. Li, Y.J. Zhang, H.Y. Gong,Effects of graphene on the thermal conductivity of pressureless-sintered SiC ceramics[J]. Ceram Int, 2015. 41(10): p. 13547-13552. [22] Bizhe Su, Guiling Liu, Zhengren Huang, et al. The effect of in situ synthesized AlN on densification of SiC ceramics by pressureless sintering[J]. Ceram Int, 2015. 41(10): p. 14172-14178. [23] Kwang-Young, Lim, Young-Wook Kim, Kwang Joo Kim. Electrical properties of SiC ceramics sintered with 0.5 wt% AlN#8211;RE2O3 (RE=Y, Nd, Lu)[J]. Ceramics International, 2014, 40(6): 10577-10582 [24] Hanqin, Liang, Xiumin, Yao, Jingxian, Zhang, Xuejian, Liua, Zhengren, Huang. The effect of rare earth oxides on the pressureless liquid phase sintering of α-SiC[J]. Journal of the European Ceramic Society, 2014, 34(122): 2865-2874 [25] Kwang-Young, Lim, Young-Wook, Kim, Kwang, Joo, Kim. Mechanical properties of electrically conductive silicon carbide ceramics[J]. Ceramics International, 2014, 40(7): 10577-10582 [26] Giuseppe Magnani, Giuliano Sico, Alida Brentari, Paride Fabbri. Solid-state pressureless sintering of silicon carbide below 2000℃[J]. Journal of the European Ceramic Society, 2014, 34(15): 4095-4098 [27] Virkar A V, Jackson T B, Culter R A. Thermodynamic and kinetic effects of oxygen removal on the thermal conductivity of aluminum nitride[J]. Journal of the American ceramic society, 1989, 72(11): 2031-2042 [28] 潘裕柏, 谭寿洪, 江东亮. SiC-AlN-Y2O3复相陶瓷的制备与性能[J]. 无机材料学报, 1995, 10(2): 189-192 [29] Y. PAN, S. TAN, D. JIANG. In-situ characterization of SiC#8211;AlN multiphase ceramics[J]. Journal of Materials Science, 1999, 34(21): 5357-5360 [30] Peng Gao, Cheng-chang, Jia Wen-bin, Cao Cong-cong, Wang Dong Liang and Guo-liang, Xu. Dielectric properties of spark plasma sintered AlN/SiC composite ceramics[J]. International Journal of Minerals, Metallurgy and Materials, 2014, 21(6): 589-594

3. 毕业设计(论文)进程安排

2015.12.22-2016.1.2 查找资料,翻译外文文献 2016.1.3-2016.1.10 学习热压烧结制备陶瓷的流程 2016.1.11-2016.1.22 写开题报告、开题PPT 2016.1.23-2016.3.23 SiC基复相陶瓷的制备及烧结性能的研究 2016.3.24-2016.5.24 SiC基复相陶瓷的制备及导热性能的研究 2016.5.25-2016.6.14 撰写论文、PPT,准备答辩

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